Taiwan Semiconductor-Single FETs, MOSFETs-TSM05N03CW

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7nC/Pd - Power Dissipation;3W/RDS(on);90mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));3V


30V 90mΩ@4.5V 3W SOT-223 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7nC/Pd - Power Dissipation;3W/RDS(on);90mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));3V30V 90mΩ@4.5V 3W SOT-223 Single... Read more

$3.81 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7nC/Pd - Power Dissipation;3W/RDS(on);90mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));3V


    30V 90mΩ@4.5V 3W SOT-223 Single FETs, MOSFETs RoHS

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