Taiwan Semiconductor-Single FETs, MOSFETs-TSM060N03CP ROG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54W/RDS(on);9mΩ@4.5V/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.16nF


30V 9mΩ@4.5V 1 N-channel 54W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54W/RDS(on);9mΩ@4.5V/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.16nF30V 9mΩ@4.5V 1 N-channel 54W... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54W/RDS(on);9mΩ@4.5V/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.16nF


    30V 9mΩ@4.5V 1 N-channel 54W TO-252(DPAK) Single FETs, MOSFETs RoHS

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