Taiwan Semiconductor-Single FETs, MOSFETs-TSM060N03ECP ROG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;54W/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.21nF


30V 1 N-channel 54W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;54W/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.21nF30V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;54W/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.21nF


    30V 1 N-channel 54W TO-252(DPAK) Single FETs, MOSFETs RoHS

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