Taiwan Semiconductor-Single FETs, MOSFETs-TSM060N03PQ33

Description

Drain to Source Voltage;30V/Gate Charge(Qg);12.9nC@10V/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);62A/Gate Threshold Voltage (Vgs(th));2.5V


30V 9mΩ@4.5V 40W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);12.9nC@10V/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);62A/Gate Threshold Voltage (Vgs(th));2.5V30V 9mΩ@4.5V 40W PDFN-8(3.1x3.1) Single... Read more

$4.71 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);12.9nC@10V/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);62A/Gate Threshold Voltage (Vgs(th));2.5V


    30V 9mΩ@4.5V 40W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

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