Taiwan Semiconductor-Single FETs, MOSFETs-TSM060NB06LCZ

Description

Drain to Source Voltage;60V/Gate Charge(Qg);107nC@10V/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);9mΩ@10V/Current - Continuous Drain(Id);111A/Gate Threshold Voltage (Vgs(th));2.5V


60V 9mΩ@10V 156W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);107nC@10V/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);9mΩ@10V/Current - Continuous Drain(Id);111A/Gate Threshold Voltage (Vgs(th));2.5V60V 9mΩ@10V 156W TO-220 Single FETs, MOSFETs... Read more

$15.63 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);107nC@10V/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);9mΩ@10V/Current - Continuous Drain(Id);111A/Gate Threshold Voltage (Vgs(th));2.5V


    60V 9mΩ@10V 156W TO-220 Single FETs, MOSFETs RoHS

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