Taiwan Semiconductor-Single FETs, MOSFETs-TSM070NH04CV RGG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;36W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);14A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.233nF


40V 7mΩ@10V 1 N-channel 36W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;36W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);14A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;36W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);14A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.233nF


    40V 7mΩ@10V 1 N-channel 36W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

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