Taiwan Semiconductor-Single FETs, MOSFETs-TSM080N03PQ56 RLG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);14.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);73A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;843pF


30V 8mΩ@10V 1 N-channel 69W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);14.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);73A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;843pF30V 8mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);14.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);73A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;843pF


    30V 8mΩ@10V 1 N-channel 69W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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