Taiwan Semiconductor-Single FETs, MOSFETs-TSM085NB03CV

Description

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));2.5V


30V 15mΩ@4.5V 52W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));2.5V30V 15mΩ@4.5V 52W Single FETs,... Read more

$4.38 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));2.5V


    30V 15mΩ@4.5V 52W Single FETs, MOSFETs RoHS

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