Taiwan Semiconductor-Single FETs, MOSFETs-TSM085P03CS RLG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);56nC@10V/Number;1 P-Channel/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);34A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.216nF


30V 8.5mΩ@10V 1 P-Channel SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);56nC@10V/Number;1 P-Channel/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);34A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.216nF30V 8.5mΩ@10V 1 P-Channel SOP-8 Single... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);56nC@10V/Number;1 P-Channel/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);34A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.216nF


    30V 8.5mΩ@10V 1 P-Channel SOP-8 Single FETs, MOSFETs RoHS

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