Taiwan Semiconductor-Single FETs, MOSFETs-TSM085P03CV RGG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;10W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);251pF/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.234nF/Output Capacitance(Coss);396pF


30V 14mΩ@4.5V 1 P-Channel 10W PDFN-8(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;10W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);251pF/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;10W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);251pF/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.234nF/Output Capacitance(Coss);396pF


    30V 14mΩ@4.5V 1 P-Channel 10W PDFN-8(3x3) Single FETs, MOSFETs RoHS

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