Taiwan Semiconductor-Single FETs, MOSFETs-TSM089N08LCR RLG
- Taiwan Semiconductor
Drain to Source Voltage;80V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);11mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);67A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.119nF80V 11mΩ@4.5V 1... Read more
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