Taiwan Semiconductor-Single FETs, MOSFETs-TSM089N08LCR RLG

Description

Drain to Source Voltage;80V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);11mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);67A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.119nF


80V 11mΩ@4.5V 1 N-channel 83W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);11mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);67A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.119nF80V 11mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);11mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);67A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.119nF


    80V 11mΩ@4.5V 1 N-channel 83W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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