Taiwan Semiconductor-Single FETs, MOSFETs-TSM090N03ECP

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.5nC/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V


30V 14mΩ@4.5V 40W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7.5nC/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V30V 14mΩ@4.5V 40W TO-252(DPAK) Single... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.5nC/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V


    30V 14mΩ@4.5V 40W TO-252(DPAK) Single FETs, MOSFETs RoHS

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