Taiwan Semiconductor-Single FETs, MOSFETs-TSM090N03ECP ROG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);9mΩ@10V/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;680pF


30V 9mΩ@10V 1 N-channel 40W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);9mΩ@10V/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;680pF30V 9mΩ@10V 1 N-channel 40W... Read more

$3.66 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);9mΩ@10V/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;680pF


    30V 9mΩ@10V 1 N-channel 40W TO-252(DPAK) Single FETs, MOSFETs RoHS

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