/Gate Charge(Qg);33nC@10V/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);92pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V750mΩ@10V 45W ITO-220S Single FETs,... Read more

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