Taiwan Semiconductor-Single FETs, MOSFETs-TSM10NC60CF C0G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);33nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.652nF


600V 750mΩ@10V 1 N-channel 45W ITO-220S-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);33nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.652nF600V 750mΩ@10V 1... Read more

$4.47 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);33nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.652nF


    600V 750mΩ@10V 1 N-channel 45W ITO-220S-3 Single FETs, MOSFETs RoHS

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