Taiwan Semiconductor-Single FETs, MOSFETs-TSM10NC65CF

Description

Drain to Source Voltage;650V/Gate Charge(Qg);34nC@10V/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V


650V 900mΩ@10V 45W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);34nC@10V/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V650V 900mΩ@10V 45W ITO-220S Single... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);34nC@10V/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V


    650V 900mΩ@10V 45W ITO-220S Single FETs, MOSFETs RoHS

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