/Gate Charge(Qg);38nC@10V/Type;N-Channel/Pd - Power Dissipation;56.8W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.928nF/Output Capacitance(Coss);114pF600mΩ@10V 56.8W ITO-220 Single FETs, MOSFETs... Read more

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