Taiwan Semiconductor-Single FETs, MOSFETs-TSM110NB04CR RLG
- Taiwan Semiconductor
Drain to Source Voltage;40V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;68W/RDS(on);11mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);54A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
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