Taiwan Semiconductor-Single FETs, MOSFETs-TSM110NB04LCV

Description

Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V


40V 16mΩ@4.5V 42W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V40V 16mΩ@4.5V 42W Single FETs,... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V


    40V 16mΩ@4.5V 42W Single FETs, MOSFETs RoHS

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