Taiwan Semiconductor-Single FETs, MOSFETs-TSM110NB04LCV RGG

Description

/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V


16mΩ@4.5V 42W Single FETs, MOSFETs RoHS

Product form

/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V16mΩ@4.5V 42W Single FETs, MOSFETs RoHS Read more

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    Description

    /Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V


    16mΩ@4.5V 42W Single FETs, MOSFETs RoHS

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