Taiwan Semiconductor-Single FETs, MOSFETs-TSM120N06LCS RLG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Pd - Power Dissipation;12.5W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.193nF


60V 12mΩ@10V 1 N-channel 12.5W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Pd - Power Dissipation;12.5W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Pd - Power Dissipation;12.5W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.193nF


    60V 12mΩ@10V 1 N-channel 12.5W SOP-8 Single FETs, MOSFETs RoHS

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