Taiwan Semiconductor-Single FETs, MOSFETs-TSM126CX RFG

Description

Drain to Source Voltage;600V/Gate Charge(Qg);1.18nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);800Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;51.42pF


600V 800Ω@10V 1 N-channel 500mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);1.18nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);800Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;51.42pF600V 800Ω@10V 1... Read more

$1.98 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);1.18nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);800Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;51.42pF


    600V 800Ω@10V 1 N-channel 500mW SOT-23 Single FETs, MOSFETs RoHS

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