Taiwan Semiconductor-Single FETs, MOSFETs-TSM130NB06LCR RLG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);18nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.175nF


60V 13mΩ@10V 1 N-channel 83W PDFN-8(5.2x5.8) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);18nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);18nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);51A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.175nF


    60V 13mΩ@10V 1 N-channel 83W PDFN-8(5.2x5.8) Single FETs, MOSFETs RoHS

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