Taiwan Semiconductor-Single FETs, MOSFETs-TSM13ND50CI

Description

Drain to Source Voltage;500V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;57W/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.877nF


500V 480mΩ@10V 1 N-channel 57W ITO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;57W/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;57W/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.877nF


    500V 480mΩ@10V 1 N-channel 57W ITO-220 Single FETs, MOSFETs RoHS

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