Taiwan Semiconductor-Single FETs, MOSFETs-TSM150P03PQ33

Description

Drain to Source Voltage;30V/Gate Charge(Qg);29.3nC@10V/Type;P-Channel/Pd - Power Dissipation;27.8W/RDS(on);30mΩ@4.5V/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.5V


30V 30mΩ@4.5V 27.8W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);29.3nC@10V/Type;P-Channel/Pd - Power Dissipation;27.8W/RDS(on);30mΩ@4.5V/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.5V30V 30mΩ@4.5V 27.8W PDFN-8(3.1x3.1) Single FETs, MOSFETs... Read more

$5.19 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);29.3nC@10V/Type;P-Channel/Pd - Power Dissipation;27.8W/RDS(on);30mΩ@4.5V/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.5V


    30V 30mΩ@4.5V 27.8W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

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