Taiwan Semiconductor-Single FETs, MOSFETs-TSM150P03PQ33 RGG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);29.3nC@10V/Number;1 P-Channel/Pd - Power Dissipation;27.8W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.829nF


30V 15mΩ@10V 1 P-Channel 27.8W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);29.3nC@10V/Number;1 P-Channel/Pd - Power Dissipation;27.8W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.829nF30V 15mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);29.3nC@10V/Number;1 P-Channel/Pd - Power Dissipation;27.8W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.829nF


    30V 15mΩ@10V 1 P-Channel 27.8W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

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