Taiwan Semiconductor-Single FETs, MOSFETs-TSM15N50CZ C0G

Description

Drain to Source Voltage;500V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);440mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);6.4pF/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.263nF/Output Capacitance(Coss);211pF


500V 440mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);440mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);6.4pF/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.263nF/Output Capacitance(Coss);211pF500V 440mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);440mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);6.4pF/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.263nF/Output Capacitance(Coss);211pF


    500V 440mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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