Taiwan Semiconductor-Single FETs, MOSFETs-TSM160P02CS RLG

Description

Drain to Source Voltage;20V/Gate Charge(Qg);24nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5W/RDS(on);28mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));1V


20V 28mΩ@1.8V 1 P-Channel 5W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);24nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5W/RDS(on);28mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));1V20V 28mΩ@1.8V 1 P-Channel... Read more

$3.84 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);24nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5W/RDS(on);28mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);14A/Gate Threshold Voltage (Vgs(th));1V


    20V 28mΩ@1.8V 1 P-Channel 5W SOP-8 Single FETs, MOSFETs RoHS

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