Taiwan Semiconductor-Single FETs, MOSFETs-TSM16ND50CI

Description

Drain to Source Voltage;500V/Gate Charge(Qg);53nC@10V/Type;N-Channel/Pd - Power Dissipation;59.5W/RDS(on);350mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.551nF/Output Capacitance(Coss);153pF


500V 350mΩ@10V 59.5W ITO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);53nC@10V/Type;N-Channel/Pd - Power Dissipation;59.5W/RDS(on);350mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.551nF/Output Capacitance(Coss);153pF500V 350mΩ@10V 59.5W... Read more

$23.46 Excl. VAT

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);53nC@10V/Type;N-Channel/Pd - Power Dissipation;59.5W/RDS(on);350mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.551nF/Output Capacitance(Coss);153pF


    500V 350mΩ@10V 59.5W ITO-220 Single FETs, MOSFETs RoHS

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