Taiwan Semiconductor-Single FETs, MOSFETs-TSM170N06CP

Description

/Gate Charge(Qg);15nC@4.5V/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));2.5V


20mΩ@4.5V 46W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

/Gate Charge(Qg);15nC@4.5V/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));2.5V20mΩ@4.5V 46W TO-252(DPAK) Single FETs, MOSFETs RoHS Read more

$7.17 Excl. VAT

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    Description

    /Gate Charge(Qg);15nC@4.5V/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);20mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));2.5V


    20mΩ@4.5V 46W TO-252(DPAK) Single FETs, MOSFETs RoHS

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