Taiwan Semiconductor-Single FETs, MOSFETs-TSM170N06PQ56 RLG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Pd - Power Dissipation;73.5W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.556nF


60V 17mΩ@10V 1 N-channel 73.5W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Pd - Power Dissipation;73.5W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.556nF60V 17mΩ@10V 1... Read more

$1.05 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Pd - Power Dissipation;73.5W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.556nF


    60V 17mΩ@10V 1 N-channel 73.5W PDFN-8(5x6) Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account