Taiwan Semiconductor-Single FETs, MOSFETs-TSM190N08CZ C0G

Description

Drain to Source Voltage;75V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);4.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);190A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.6nF


75V 4.2mΩ@10V 1 N-channel 250W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;75V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);4.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);190A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.6nF75V 4.2mΩ@10V 1... Read more

$5.49 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;75V/Gate Charge(Qg);160nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250W/RDS(on);4.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);190A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.6nF


    75V 4.2mΩ@10V 1 N-channel 250W TO-220 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account