Taiwan Semiconductor-Single FETs, MOSFETs-TSM1NB60CH C5G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);6.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;39W/RDS(on);10Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;138pF


600V 10Ω@10V 1 N-channel 39W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);6.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;39W/RDS(on);10Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;138pF600V 10Ω@10V 1... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);6.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;39W/RDS(on);10Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;138pF


    600V 10Ω@10V 1 N-channel 39W TO-251(IPAK) Single FETs, MOSFETs RoHS

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