Taiwan Semiconductor-Single FETs, MOSFETs-TSM1NB60CP

Description

/Gate Charge(Qg);6.1nC@10V/Type;N-Channel/Pd - Power Dissipation;39W/RDS(on);10Ω@10V/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.5V


10Ω@10V 39W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

/Gate Charge(Qg);6.1nC@10V/Type;N-Channel/Pd - Power Dissipation;39W/RDS(on);10Ω@10V/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.5V10Ω@10V 39W TO-252(DPAK) Single FETs, MOSFETs RoHS Read more

$5.61 Excl. VAT

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    Description

    /Gate Charge(Qg);6.1nC@10V/Type;N-Channel/Pd - Power Dissipation;39W/RDS(on);10Ω@10V/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4.5V


    10Ω@10V 39W TO-252(DPAK) Single FETs, MOSFETs RoHS

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