Taiwan Semiconductor-Single FETs, MOSFETs-TSM210N02CX

Description

Drain to Source Voltage;20V/Gate Charge(Qg);5.8nC@4.5V/Type;N-Channel/Pd - Power Dissipation;1.56W/RDS(on);32mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.7A/Gate Threshold Voltage (Vgs(th));800mV


20V 32mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);5.8nC@4.5V/Type;N-Channel/Pd - Power Dissipation;1.56W/RDS(on);32mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.7A/Gate Threshold Voltage (Vgs(th));800mV20V 32mΩ@1.8V 1.56W SOT-23 Single... Read more

$1.98 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);5.8nC@4.5V/Type;N-Channel/Pd - Power Dissipation;1.56W/RDS(on);32mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.7A/Gate Threshold Voltage (Vgs(th));800mV


    20V 32mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs RoHS

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