Taiwan Semiconductor-Single FETs, MOSFETs-TSM2308CX RFG

Description

Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);156mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;511pF


60V 156mΩ@10V 1 N-channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);156mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;511pF60V 156mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);156mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;511pF


    60V 156mΩ@10V 1 N-channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

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