Taiwan Semiconductor-Single FETs, MOSFETs-TSM2309CX

Description

/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;1.56W/RDS(on);240mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));2.5V


240mΩ@4.5V 1.56W SOT-23 Single FETs, MOSFETs RoHS

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/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;1.56W/RDS(on);240mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));2.5V240mΩ@4.5V 1.56W SOT-23 Single FETs, MOSFETs RoHS Read more

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    Description

    /Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;1.56W/RDS(on);240mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));2.5V


    240mΩ@4.5V 1.56W SOT-23 Single FETs, MOSFETs RoHS

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