Taiwan Semiconductor-Single FETs, MOSFETs-TSM2318CX RFG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);62.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;540pF/Output Capacitance(Coss);80pF


N-Channel 40V 3.9A 1.25W Surface Mount SOT-23

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);62.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);62.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;540pF/Output Capacitance(Coss);80pF


    N-Channel 40V 3.9A 1.25W Surface Mount SOT-23

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