Taiwan Semiconductor-Single FETs, MOSFETs-TSM250N02CX

Description

Drain to Source Voltage;20V/Gate Charge(Qg);7.7nC@4.5V/Pd - Power Dissipation;1.56W/RDS(on);55mΩ@1.8V/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));800mV


20V 55mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);7.7nC@4.5V/Pd - Power Dissipation;1.56W/RDS(on);55mΩ@1.8V/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));800mV20V 55mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs... Read more

$2.04 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);7.7nC@4.5V/Pd - Power Dissipation;1.56W/RDS(on);55mΩ@1.8V/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));800mV


    20V 55mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs RoHS

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