Taiwan Semiconductor-Single FETs, MOSFETs-TSM250N02CX RFG

Description

Drain to Source Voltage;20V/Gate Charge(Qg);7.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.56W/RDS(on);25mΩ@4.5V/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;535pF


20V 25mΩ@4.5V 1 N-channel 1.56W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);7.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.56W/RDS(on);25mΩ@4.5V/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;535pF20V 25mΩ@4.5V 1 N-channel 1.56W... Read more

$0.87 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);7.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.56W/RDS(on);25mΩ@4.5V/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;535pF


    20V 25mΩ@4.5V 1 N-channel 1.56W SOT-23 Single FETs, MOSFETs RoHS

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