Taiwan Semiconductor-Single FETs, MOSFETs-TSM250NB06LCV

Description

Drain to Source Voltage;60V/Gate Charge(Qg);11nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);28mΩ@4.5V/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.5V


60V 28mΩ@4.5V 42W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);11nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);28mΩ@4.5V/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.5V60V 28mΩ@4.5V 42W Single FETs, MOSFETs RoHS Read more

$5.01 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);11nC@10V/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);28mΩ@4.5V/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.5V


    60V 28mΩ@4.5V 42W Single FETs, MOSFETs RoHS

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