Taiwan Semiconductor-Single FETs, MOSFETs-TSM260P02CX RFG

Description

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.645nF


20V 40mΩ@1.8V 1 P-Channel 1.6W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$1.62 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.645nF


    20V 40mΩ@1.8V 1 P-Channel 1.6W SOT-23 Single FETs, MOSFETs RoHS

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