Taiwan Semiconductor-Single FETs, MOSFETs-TSM260P02CX6 RFG

Description

Drain to Source Voltage;20V/Gate Charge(Qg);19.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.56W/RDS(on);26mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.5A/Ciss-Input Capacitance;1.67nF


20V 26mΩ@4.5V 1 P-Channel 1.56W SOT-26 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);19.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.56W/RDS(on);26mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.5A/Ciss-Input Capacitance;1.67nF20V 26mΩ@4.5V 1 P-Channel 1.56W SOT-26... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);19.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.56W/RDS(on);26mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.5A/Ciss-Input Capacitance;1.67nF


    20V 26mΩ@4.5V 1 P-Channel 1.56W SOT-26 Single FETs, MOSFETs RoHS

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