Taiwan Semiconductor-Single FETs, MOSFETs-TSM2N60SCW RPG

Description

Drain to Source Voltage;600V/Gate Charge(Qg);13nC/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);5Ω@10V/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));4V


600V 5Ω@10V 2.5W SOT-223 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);13nC/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);5Ω@10V/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));4V600V 5Ω@10V 2.5W SOT-223 Single FETs, MOSFETs... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);13nC/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);5Ω@10V/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));4V


    600V 5Ω@10V 2.5W SOT-223 Single FETs, MOSFETs RoHS

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