Taiwan Semiconductor-Single FETs, MOSFETs-TSM2N7002KCX RFG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);400pC@10V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);4Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;30pF


N-Channel 60V 300mA 300mW Surface Mount SOT-23

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);400pC@10V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);4Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);400pC@10V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);4Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;30pF


    N-Channel 60V 300mA 300mW Surface Mount SOT-23

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