Taiwan Semiconductor-Single FETs, MOSFETs-TSM2NB60CH C5G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);9.9nC@10V/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);4.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));4.5V


600V 4.4Ω@10V 60W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);9.9nC@10V/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);4.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));4.5V600V 4.4Ω@10V 60W TO-251(IPAK) Single... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);9.9nC@10V/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);4.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));4.5V


    600V 4.4Ω@10V 60W TO-251(IPAK) Single FETs, MOSFETs RoHS

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