Taiwan Semiconductor-Single FETs, MOSFETs-TSM340N06CP ROG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);16.6nC@10V/Pd - Power Dissipation;66W/RDS(on);34mΩ@10V/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.18nF


60V 34mΩ@10V 66W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);16.6nC@10V/Pd - Power Dissipation;66W/RDS(on);34mΩ@10V/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.18nF60V 34mΩ@10V 66W TO-252(DPAK) Single FETs,... Read more

$0.87 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);16.6nC@10V/Pd - Power Dissipation;66W/RDS(on);34mΩ@10V/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.18nF


    60V 34mΩ@10V 66W TO-252(DPAK) Single FETs, MOSFETs RoHS

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