Taiwan Semiconductor-Single FETs, MOSFETs-TSM3481CX6

Description

Drain to Source Voltage;30V/Pd - Power Dissipation;1.6W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));3V


30V 48mΩ@10V 1.6W SOT-26 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Pd - Power Dissipation;1.6W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));3V30V 48mΩ@10V 1.6W SOT-26 Single FETs,... Read more

$3.60 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Pd - Power Dissipation;1.6W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));3V


    30V 48mΩ@10V 1.6W SOT-26 Single FETs, MOSFETs RoHS

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