Taiwan Semiconductor-Single FETs, MOSFETs-TSM3481CX6 RFG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);18.09nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.04798nF


30V 5.7A 1.6W Surface Mount SOT-26

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Drain to Source Voltage;30V/Gate Charge(Qg);18.09nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.04798nF30V 5.7A 1.6W... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);18.09nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.7A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.04798nF


    30V 5.7A 1.6W Surface Mount SOT-26

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