Taiwan Semiconductor-Single FETs, MOSFETs-TSM3N90CZ C0G

Description

Drain to Source Voltage;900V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;94W/RDS(on);5.1Ω@10V/Reverse Transfer Capacitance (Crss@Vds);8.7pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;748pF/Output Capacitance(Coss);55pF


900V 5.1Ω@10V 1 N-channel 94W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;94W/RDS(on);5.1Ω@10V/Reverse Transfer Capacitance (Crss@Vds);8.7pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;748pF/Output Capacitance(Coss);55pF900V... Read more

$4.38 Excl. VAT

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;94W/RDS(on);5.1Ω@10V/Reverse Transfer Capacitance (Crss@Vds);8.7pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;748pF/Output Capacitance(Coss);55pF


    900V 5.1Ω@10V 1 N-channel 94W TO-220 Single FETs, MOSFETs RoHS

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